SEMICONDUCTOR SURFACE-ROUGHNESS - DEPENDENCE ON SIGN AND MAGNITUDE OF BULK STRAIN

被引：251

作者：

XIE, YH ^{[1
]}

GILMER, GH ^{[1
]}

ROLAND, C ^{[1
]}

SILVERMAN, PJ ^{[1
]}

BURATTO, SK ^{[1
]}

CHENG, JY ^{[1
]}

FITZGERALD, EA ^{[1
]}

KORTAN, AR ^{[1
]}

SCHUPPLER, S ^{[1
]}

MARCUS, MA ^{[1
]}

CITRIN, PH ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT PHYS, RALEIGH, NC 27695 USA

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.73.3006

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Changes in surface roughness have been studied as a function of bulk compressive and tensile strains (biaxial in the plane of the sample surface) in thin films of compositionally uniform and dislocation-free Ge0.5Si0.5. A pronounced surface roughness is observed only for films under compressive strains exceeding 1.4%. Molecular dynamics simulations show that this striking result has its origin in the strain-induced lowering of surface step free energies. © 1994 The American Physical Society.

引用

页码：3006 / 3009

页数：4

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