RADIATION-DAMAGE AND HARDENING EFFECTS ON COMPENSATED GAAS LIGHT-EMITTING DIODES

被引：17

作者：

SHARE, S ^{[1
]}

EPSTEIN, AS ^{[1
]}

POLIMADEI, RA ^{[1
]}

机构：

[1] HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA

来源：

关键词：

D O I：

10.1109/TNS.1973.4327404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：256 / 260

页数：5

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[4]

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[5]

ASHLEY KL, 1968, 2 P INT C GAAS

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BARNES, CE .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12) :4735-+

[8] NEUTRON DAMAGE IN EPITAXIAL GAAS LASER DIODES [J].

BARNES, CE .

[9]

BEBB HB, 1972, SEMICONDUCTOR SEMIME, V8, P261

BYER, NE .