NEUTRON DAMAGE IN EPITAXIAL GAAS LASER DIODES

被引：24

作者：

BARNES, CE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 05期

关键词：

D O I：

10.1063/1.1660470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1941 / +

页数：1

相关论文

共 35 条

[1] RADIATION EFFECTS IN GAAS
AUKERMAN, LW
GRAFT, RD
DAVIS, PW
SHILLIDAY, TS
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3590 - +
[2] EFFECTS OF RADIATION DAMAGE ON BEHAVIOR OF GAAS P-N JUNCTIONS
AUKERMAN, LW
MILLEA, MF
MCCOLL, M
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) : 174 - &
[3] BAND-FILLING CURRENT IN HEAVILY DOPED GAAS DIODES
AUKERMAN, LW
MILLEA, MF
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) : 2585 - &
[4] EFFECTS OF CO-60 GAMMA IRRADIATION ON EPITAXIAL GAAS LASER DIODES
BARNES, CE
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12): : 4735 - +
[5] BARNES CE, UNPUBLISHED DATA
[6] EFFECT OF ARSENIC PRESSURE ON CRYSTAL EFFICIENCY FOR INJECTION LUMINESCENCE IN GALLIUM ARSENIDE
BRICE, JC
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (04) : 335 - &
[7] INFRARED ABSORPTION IN NEUTRON-IRRADIATED GAAS
BURKIG, VC
MCNICHOLS, JL
GINELL, WS
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3268 - +
[8] RADIATIVE TUNNELING IN GAAS ABRUPT ASYMMETRICAL JUNCTIONS
CASEY, HC
SILVERSMITH, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 241 - +
[9] MECHANISMS OF RADIATION EFFECTS ON LASERS
COMPTON, DMJ
CESENA, RA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 55 - +
[10] EFFECTS OF OXYGEN AND DOPANT ON LIFETIME IN NEUTRON-IRRADIATED SILICON
CURTIS, OL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) : 33 - +

← 1 2 3 4 →