INGAAS/INALAS SUPERLATTICE AVALANCHE PHOTODIODE WITH A SEPARATED PHOTOABSORPTION LAYER

被引：18

作者：

KAGAWA, T

KAWAMURA, Y

ASAI, H

NAGANUMA, M

机构：

[1] NTT Opto-Electronics Laboratories, Atsugi-shi, Kanagawa Pref. 243-01

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.104004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel structure superlattice avalanche photodiode is proposed. A p-InGaAs photoabsorption layer is separated from a nondoped InGaAs/InAlAs superlattice avalanche multiplication region. The electric field strength at the photoabsorption layer is controlled by a thin, highly doped p-InGaAs layer, which is sandwiched between the multiplication and photoabsorption layers. Devices with this structure were fabricated by molecular beam epitaxy. The external quantum efficiency is 73% at the multiplication factor of unity. The multiplication noise is quite small corresponding to an effective ionization rate ratio of 0.1. The maximum 3 dB bandwidth is 9.3 GHz.

引用

页码：1895 / 1897

页数：3

共 17 条

[1] IONIZATION COEFFICIENT MEASUREMENT IN GAAS BY USING MULTIPLICATION NOISE CHARACTERISTICS [J].