DEPENDENCE OF THE GAAS/ALGAAS SUPERLATTICE IONIZATION RATE ON AL CONTENT

被引：41

作者：

KAGAWA, T

IWAMURA, H

MIKAMI, O

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.100825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：33 / 35

页数：3

共 12 条

[1] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].

BATEY, J ;

WRIGHT, SL .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :200-209

[2] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J].

BULMAN, GE ;

ROBBINS, VM ;

BRENNAN, KF ;

HESS, K ;

STILLMAN, GE .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :181-185

[3] ELECTRO-ABSORPTION PRODUCED MIXED INJECTION AND ITS EFFECT ON THE DETERMINATION OF IONIZATION COEFFICIENTS [J].

BULMAN, GE ;

COOK, LW ;

STILLMAN, GE .

SOLID-STATE ELECTRONICS, 1982, 25 (12) :1189-1200

[4] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].

CAPASSO, F ;

TSANG, WT ;

HUTCHINSON, AL ;

WILLIAMS, GF .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40

[5]

CASEY HC, 1978, HETEROSTRUCTURE LA B, P17

[6] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].

CHIN, R ;

HOLONYAK, N ;

STILLMAN, GE ;

TANG, JY ;

HESS, K .

ELECTRONICS LETTERS, 1980, 16 (12) :467-469

[7] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS-ALXGA1-XAS SUPERLATTICES [J].

JUANG, FY ;

DAS, U ;

NASHIMOTO, Y ;

BHATTACHARYA, PK .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :972-974

[8] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[9] TUNNELING THROUGH INDIRECT-GAP SEMICONDUCTOR BARRIERS [J].

MENDEZ, EE ;

CALLEJA, E ;

WANG, WI .

PHYSICAL REVIEW B, 1986, 34 (08) :6026-6029

[10] ELECTRON AND HOLE IMPACT IONIZATION RATES IN INP/GA0.47IN0.53AS SUPERLATTICE [J].

OSAKA, F ;

MIKAWA, T ;

WADA, O .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (10) :1986-1991

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