ELECTRO-ABSORPTION PRODUCED MIXED INJECTION AND ITS EFFECT ON THE DETERMINATION OF IONIZATION COEFFICIENTS

被引：21

作者：

BULMAN, GE

COOK, LW

STILLMAN, GE

机构：

[1] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, COORDINATED SCI RES LAB, URBANA, IL 61801 USA

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 12期

关键词：

D O I：

10.1016/0038-1101(82)90079-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1189 / 1200

页数：12

共 21 条

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[3]

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[4] THE EFFECT OF ELECTRO-ABSORPTION ON THE DETERMINATION OF IONIZATION COEFFICIENTS [J].

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COOK, LW ;

STILLMAN, GE .

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SOLID-STATE ELECTRONICS, 1979, 22 (07) :599-620

[7] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS [J].

COOK, LW ;

BULMAN, GE ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :589-591

[8] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J].

DAVIES, RL ;

GENTRY, FE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :313-+

[9] ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J].

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SOLID-STATE ELECTRONICS, 1973, 16 (10) :1189-1203

[10]

KAO CW, 1980, SOLID STATE ELECTRON, V23, P881, DOI 10.1016/0038-1101(80)90106-9

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