MODULATION PROPERTIES OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER

被引：41

作者：

LIDOYNE, O

GALLION, PB

ERASME, D

机构：

[1] Ecole Nationale Superiéure des Télécommunications, Paris

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 03期

关键词：

D O I：

10.1109/3.81332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The modulation properties of an injection-locked semiconductor laser are investigated using the rate equation formalism. Intensity and phase modulations (IM and PM) are analyzed throughout the locking range where the locked laser is stable. The relaxation oscillation resonance in the IM and PM frequency responses can be dramatically reduced by tuning the injected power and the frequency difference between the master laser and the free-running slave laser. The power spectra under direct modulation are derived throughout the stable locking range. The spreading of the harmonics of the modulated locked laser is strongly affected by the frequency detuning, the injected power, and the injected current modulation. Measurements illustrating the theoretical results are also presented.

引用

页码：344 / 351

页数：8

共 34 条

[1] POWER SPECTRUM OF DIRECTLY MODULATED SINGLE-MODE SEMICONDUCTOR-LASERS - CHIRP-INDUCED FINE-STRUCTURE [J].