INSITU STRAIN-MEASUREMENTS DURING THE FORMATION OF PLATINUM SILICIDE FILMS

Using an in situ double optical beam technique, the evolution of the strain for the Pt-Si system was followed before, during, and after reaction. During initial heating and prior to reaction only a compressive thermal stress is observed whereupon reaction to form Pt2Si yields a compressive intrinsic stress. The mechanism for stress buildup and relaxation is elucidated and shown to be related to the relative motion of Pt and Si atoms during the respective processes.