BAND OFFSETS AND STRAIN IN CDTE-GAAS HETEROSTRUCTURES

被引：26

作者：

BRATINA, G ^{[1
]}

SORBA, L ^{[1
]}

ANTONINI, A ^{[1
]}

CECCONE, G ^{[1
]}

NICOLINI, R ^{[1
]}

BIASIOL, G ^{[1
]}

FRANCIOSI, A ^{[1
]}

ANGELO, JE ^{[1
]}

GERBERICH, WW ^{[1
]}

机构：

[1] UNIV MINNESOTA, DEPT CHEM ENGN & MAT SCI, MINNEAPOLIS, MN 55455 USA

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.48.8899

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdTe(111)-GaAs(001) and CdTe(001)-GaAs(001) heterostructures were synthesized through molecular-beam epitaxy. In situ monochromatic x-ray photoemission spectroscopy and reflection high-energy electron diffraction, together with ex situ cross-sectional transmission electron microscopy, were exploited to probe the relation between overlayer orientation, residual strain, and the band discontinuities. CdTe(001)-GaAs(001) heterostructures appear fully relaxed even at the lowest overlayer thicknesses explored through the formation of a misfit dislocation network. Correspondingly, the valence-band maximum in the CdTe(001) overlayer is found 0.07-0.09 eV below that of GaAs(001). In CdTe(111)-GaAs(001) heterostructures, we find that residual strains are gradually accommodated within a 200-angstrom-thick CdTe layer near the interface. The average position of the valence-band maximum in CdTe(111) is 0.09-0.11 eV above that of GaAs(001) at the interface. The difference in valence-band discontinuity for the two interfaces is qualitatively consistent with that expected from the effect of the residual strain on the valence-band maximum of CdTe(111).

引用

页码：8899 / 8910

页数：12

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