THERMODYNAMIC CONSIDERATIONS OF VAPOR EPITAXIAL-GROWTH OF CUINS2-GAP HETEROJUNCTIONS

被引:6
作者
HWANG, HL [1 ]
TSENG, BH [1 ]
SUN, CY [1 ]
机构
[1] IND TECHNOL RES INST,HSINCHU,TAIWAN
关键词
D O I
10.7567/JJAPS.19S3.43
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:43 / 48
页数:6
相关论文
共 20 条
[1]  
ALAN R, 1963, J PHYS CHEM SOLIDS, V67, P2400
[2]   THERMODYNAMICAL CONSIDERATION FOR PREPARATION OF GAAS-GE HETEROJUNCTIONS THROUGH CLOSED TUBE PROCESS [J].
ARIZUMI, T ;
NISHINAGA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (01) :21-+
[3]   DEBYE TEMPERATURE AND STANDARD ENTROPIES AND ENTHALPIES OF COMPOUND SEMICONDUCTORS OF TYPE-I-III-VI2 [J].
BACHMANN, KJ ;
HSU, FSL ;
THIEL, FA ;
KASPER, HM .
JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (04) :431-448
[4]  
BERAN D, 1964, ELECTROCHEM SOC JPN
[5]   THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J].
FERGUSSON, RR ;
GABOR, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) :585-592
[6]   THE EPITAXIAL GROWTH OF GAP BY A GA2O VAPOR TRANSPORT MECHANISM [J].
FROSCH, CJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) :180-184
[7]   GROWTH OF CUINS2 AND ITS CHARACTERIZATION [J].
HWANG, HL ;
SUN, CY ;
LEU, CY ;
CHENG, CL ;
TU, CC .
REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12) :745-751
[8]   ON THE PREPARATION OF CUINS2 THIN-FILMS BY FLASH EVAPORATION [J].
HWANG, HL ;
TU, CC ;
MAA, JS ;
SUN, CY .
SOLAR ENERGY MATERIALS, 1980, 2 (04) :433-446
[9]   GROWTH AND PROPERTIES OF SPUTTER-DEPOSITED CUINS2 THIN-FILMS [J].
HWANG, HL ;
CHENG, CL ;
LIU, LM ;
LIU, YC ;
SUN, CY .
THIN SOLID FILMS, 1980, 67 (01) :83-93
[10]   GROWTH AND PROPERTIES OF CUINNS2 EPITAXIAL LAYERS OBTAINED BY CHEMICAL VAPOR TRANSPORT [J].
HWANG, HL ;
TSENG, BH ;
SUN, CY ;
LOFERSKI, JJ .
SOLAR ENERGY MATERIALS, 1980, 4 (01) :67-79