A METHOD TO ELIMINATE WETTING DURING THE HOMOGENIZATION OF HGCDTE

被引：10

作者：

SU, CH

LEHOCZKY, SL

SZOFRAN, FR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.337541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3777 / 3779

页数：3

共 11 条

[1]

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[6]

Su C.-W., UNPUB

[7] PARTIAL PRESSURES OVER THE PSEUDOBINARY SOLID-SOLUTION HG1-XCDXTE(S) FOR X = 0.70 AND 0.95 AND OVER 4 TE-RICH TERNARY MELTS [J].

SU, CH ;

LIAO, PK ;

BREBRICK, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) :942-949

[8] DEFECT CHEMISTRY AND INTRINSIC CARRIER CONCENTRATION FOR HG1-XCDXTE(S) FOR X = 0.20, 0.40, AND 1.0 [J].

SU, CH ;

LIAO, PK ;

BREBRICK, RF .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) :771-826

[9] THE PSEUDOBINARY HGTE-CDTE PHASE-DIAGRAM [J].

SZOFRAN, FR ;

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JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :1131-1150

[10] GROWTH BY TRAVELING HEATER METHOD AND CHARACTERISTIC OF UNDOPED HIGH-RESISTIVITY CDTE [J].

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SHIRAFUJI, J ;

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