PHOTOREFLECTANCE FROM GAAS AND GAAS GAAS INTERFACES

被引：71

作者：

SYDOR, M

ANGELO, J

WILSON, JJ

MITCHEL, WC

YEN, MY

机构：

[1] USAF,MAT LAB,WRIGHT PATTERSON AFB,OH 45433

[2] SYSTRAN CORP,DAYTON,OH 45432

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.40.8473

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8473 / 8484

页数：12

共 25 条

[1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[2] BAND NONPARABOLICITIES, BROADENING, AND INTERNAL FIELD DISTRIBUTIONS - SPECTROSCOPY OF FRANZ-KELDYSH OSCILLATIONS [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1974, 10 (10) :4228-4238

[3] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].

ASPNNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652

[4] ELECTROREFLECTANCE AND PHOTOREFLECTANCE STUDY OF THE SPACE-CHARGE REGION IN SEMICONDUCTORS - (IN-SN-O)/INP AS A MODEL SYSTEM [J].

BHATTACHARYA, RN ;

SHEN, H ;

PARAYANTHAL, P ;

POLLAK, FH ;

COUTTS, T ;

AHARONI, H .

PHYSICAL REVIEW B, 1988, 37 (08) :4044-4050

[5] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[6] MODULATION SPECTROSCOPY AS A TOOL FOR ELECTRONIC MATERIAL CHARACTERIZATION [J].

BOTTKA, N ;

GASKILL, DK ;

SILLMON, RS ;

HENRY, R ;

GLOSSER, R .

JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (02) :161-170

[7] PHOTOREFLECTANCE CHARACTERIZATION OF OMVPE GAAS ON SI [J].

BOTTKA, N ;

GASKILL, DK ;

GRIFFITHS, RJM ;

BRADLEY, RR ;

JOYCE, TB ;

ITO, C ;

MCINTYRE, D .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :481-486

[8]

Cardona M., 1969, MODULATION SPECTROSC

[9]

CASEY HC, 1978, HETEROSTRUCTURE LA B

[10]

FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484

← 1 2 3 →