ELECTRIC SURFACE IMPEDANCE

[31] HALBRITTER J, 1976, KERNFORSCHUNGSZENTRU

[32] HALBRITTER J, 1970, KERFORSCHUNGSZENTRUM

[33] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &

[34] ELEMENTARY LOGIC CIRCUIT EMPLOYING SUPERCONDUCTING JOSEPHSON TUNNELING GATES [J]. IEEE TRANSACTIONS ON MAGNETICS, 1974, MA10 (03) : 860 - 863

[35] REACTIONS OF ANODICALLY PRODUCED NOBIUM OXIDE FILMS [J]. ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1970, 69 (3-4): : 140 - &

[36] JURETSCHKE HJ, COMMUNICATION

[37] Kane E. O., 1969, TUNNELING PHENOMENA

[38] Kneisel P., COMMUNICATION

[39] KOFSTAD P, 1963, HIGH TEMPERATURE OXI

[40] LANDAU LD, 1967, LEHRBUCH THEORETISCH

[31] HALBRITTER J, 1976, KERNFORSCHUNGSZENTRU

[32] HALBRITTER J, 1970, KERFORSCHUNGSZENTRUM

[33] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &

[34] ELEMENTARY LOGIC CIRCUIT EMPLOYING SUPERCONDUCTING JOSEPHSON TUNNELING GATES [J]. IEEE TRANSACTIONS ON MAGNETICS, 1974, MA10 (03) : 860 - 863

[35] REACTIONS OF ANODICALLY PRODUCED NOBIUM OXIDE FILMS [J]. ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1970, 69 (3-4): : 140 - &

[36] JURETSCHKE HJ, COMMUNICATION

[37] Kane E. O., 1969, TUNNELING PHENOMENA

[38] Kneisel P., COMMUNICATION

[39] KOFSTAD P, 1963, HIGH TEMPERATURE OXI

[40] LANDAU LD, 1967, LEHRBUCH THEORETISCH