DYNAMIC MONTE-CARLO SIMULATION OF COMPOSITIONAL CHANGE AND ATOMIC REDISTRIBUTION IN MULTICOMPONENT TARGETS UNDER ION-BOMBARDMENT

被引:27
作者
CHAKAROV, IR [1 ]
TODOROV, SS [1 ]
KARPUZOV, DS [1 ]
机构
[1] BULGARIAN ACAD SCI,INST ELECTR,BLVD TRAKIA 72,BU-1784 SOFIA,BULGARIA
关键词
D O I
10.1016/0168-583X(92)96010-V
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A dynamic Monte Carlo program developed for the simulation of high-fluence effects in ion bombardment of multicomponent targets is described. The program includes a code for modelling the chemically guided motion of the slowed down primaries and recoils. Examples of the application of the simulation program to Ar+ sputtering of CdHgTe and SiO2, O+ implantation into Si and Ar+ sputtering of Al/Si with concurrent adsorption of O2 are presented and compared with experimental results.
引用
收藏
页码:193 / 199
页数:7
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