SPUTTERING EFFECTS IN HIGH-DOSE BI+ IMPLANTATION OF GAAS

被引：4

作者：

BUDINOV, HI ^{[1
]}

KARPUZOV, DS ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI,INST ELECTR,BU-1784 SOFIA,BULGARIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 47卷 / 01期

关键词：

Computer Simulation - Sputtering;

D O I：

10.1016/0168-583X(90)90044-U

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Semi-insulating Cr-doped (100) GaAs was implanted with Bi+ with energy 40 keV at room temperature in a 7 ° off-axis direction. The implanted dose was varied between 2 × 1015 cm-2 and 1 × 1016 cm-2. The profile evolution was studied experimentally by RBS measurements and theoretically by a new dynamic computer code. It is based on sputtering yield values and impurity depth distributions, obtained by using the static simulation program TRIM.SP. © 1990.

引用

页码：33 / 36

页数：4

共 24 条

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