TUNGSTEN SILICIDE BARRIER LAYERS IN ALUMINUM OHMIC CONTACT SYSTEMS

被引:6
作者
HARA, T
HAYASHIDA, H
TAKAHASHI, S
YAMANOUE, A
机构
关键词
D O I
10.1016/0040-6090(89)90552-X
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:9 / 16
页数:8
相关论文
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