RAMAN INTENSITY ENHANCEMENT OF THE SI PEAK BY CDS THIN-FILMS

被引：8

作者：

DAI, CM

CHUU, DS

HSIEH, WF

机构：

[1] NATL CHIAO TUNG UNIV INST ELECTROOPT ENGN,HSINCHU 30050,TAIWAN

[2] NATL CHIAO TUNG UNIV,INST ELECTROPHYS,HSINCHU 30050,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 25期

关键词：

D O I：

10.1063/1.105728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method, which utilizes interference enhanced Raman scattering and resonant Raman scattering techniques, is used to overcome the low efficiency of Raman methods to diagnose highly reflective materials. As applied to the p-type Si wafer, the enhanced gain is up to nearly a factor of 80 at 4880 angstrom excitation. Because of the strong absorption of the scattered light, it is recommended that the suitable deposited thickness of CdS films should not be thicker than 700 angstrom.

引用

页码：3273 / 3275

页数：3

共 16 条

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