RECOMBINATION DYNAMICS IN POROUS SILICON

被引：12

作者：

PAVESI, L ^{[1
]}

CESCHINI, M ^{[1
]}

ROMAN, HE ^{[1
]}

机构：

[1] UNIV HAMBURG,INST THEORET PHYS,D-20355 HAMBURG,GERMANY

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

COMPUTER SIMULATION; LUMINESCENCE; NANOSTRUCTURES; SILICON;

D O I：

10.1016/0040-6090(94)05608-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The diffusion of photoexcited carriers in porous silicon strongly affects their recombination dynamics. This is evidenced by a detailed study of the room temperature time-resolved photoluminescence of porous silicon samples with various porosities. Monte Carlo simulations of the photoexcited carrier diffusion by the trap-controlled hopping mechanism in a disordered array of silicon quantum dots have been performed to elucidate the interplay between on-site recombinations and diffusion of carriers. The numerical results are in good qualitative agreement with the experimental data.

引用

页码：67 / 69

页数：3

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