REDUCING DOMAIN BOUNDARIES OF SURFACE RECONSTRUCTION DURING MOLECULAR-BEAM EPITAXY ON SI(111)

被引：22

作者：

HIBINO, H

OGINO, T

机构：

[1] NTT Basic Research Laboratories, Atsugi

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 07期

关键词：

D O I：

10.1063/1.114693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the behavior of steps and out-of-phase boundaries (OPBs) of 7X7 reconstruction on Si(lll) during Si molecular beam epitaxy. During step-flow growth, Si atoms are preferentially incorporated into the crystal at positions where steps are connected with OPBs on the lower terraces, resulting in sawtooth shaped steps. This heterogeneous advancement of steps causes OPBs to rearrange and thereby reduce in number. (C) 1995 American Institute of Physics.

引用

收藏

页码：915 / 917

页数：3

相关论文

共 21 条

[1] FINITE-TEMPERATURE PHASE-DIAGRAM OF VICINAL SI(100) SURFACES [J].

ALERHAND, OL ;

BERKER, AN ;

JOANNOPOULOS, JD ;

VANDERBILT, D ;

HAMERS, RJ ;

DEMUTH, JE .

PHYSICAL REVIEW LETTERS, 1990, 64 (20) :2406-2409

[2] THE MEANDERING OF STEPS AND THE TERRACE WIDTH DISTRIBUTION ON CLEAN SI(111) - AN INSITU EXPERIMENT USING REFLECTION ELECTRON-MICROSCOPY [J].

ALFONSO, C ;

BERMOND, JM ;

HEYRAUD, JC ;

METOIS, JJ .

SURFACE SCIENCE, 1992, 262 (03) :371-381

[3] MORPHOLOGICAL INSTABILITY OF A TERRACE EDGE DURING STEP-FLOW GROWTH [J].

BALES, GS ;

ZANGWILL, A .

PHYSICAL REVIEW B, 1990, 41 (09) :5500-5508

[4] SCALING OF THE ACTIVE ZONE IN THE EDEN PROCESS ON PERCOLATION NETWORKS AND THE BALLISTIC DEPOSITION MODEL [J].

FAMILY, F ;

VICSEK, T .

JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1985, 18 (02) :L75-L81

[5] ATTRACTIVE INTERACTION BETWEEN STEPS [J].

FROHN, J ;

GIESEN, M ;

POENSGEN, M ;

WOLF, JF ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1991, 67 (25) :3543-3546

[6] DYNAMIC OBSERVATION OF SI CRYSTAL-GROWTH ON A SI(111)7X7 SURFACE BY HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY [J].

HASEGAWA, T ;

KOHNO, M ;

HOSAKA, S ;

HOSOKI, S .

PHYSICAL REVIEW B, 1993, 48 (03) :1943-1946

[7] MESH PATTERN OF GE ISLANDS GROWN USING SOLID-PHASE EPITAXY [J].

HIBINO, H ;

SHIMIZU, N ;

SHINODA, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1993, 11 (05) :2458-2462

[8] DIRECT EVIDENCE FOR GE PREFERENTIAL GROWTH AT STEPS AND OUT-OF-PHASE BOUNDARIES OF (7X7) DOMAINS ON SI(111) IN SOLID-PHASE EPITAXY [J].

HOMMA, Y ;

HIBINO, H ;

AIZAWA, N .

SURFACE SCIENCE, 1995, 324 (01) :L333-L336

[9]

HORNVONHOEGEN M, 1994, SURF SCI, V321, pL129, DOI 10.1016/0039-6028(94)90016-7

[10] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671