FRACTIONAL STOICHIOMETRY OF THE GAAS(001)C(4X4) SURFACE - AN INSITU X-RAY-SCATTERING STUDY

被引：142

作者：

SAUVAGESIMKIN, M

PINCHAUX, R

MASSIES, J

CALVERIE, P

JEDRECY, N

BONNET, J

ROBINSON, IK

机构：

[1] LAB MINERAL CRISTALLOG,F-75252 PARIS,FRANCE

[2] UNIV PIERRE & MARIE CURIE,F-75252 PARIS,FRANCE

[3] LAB PHYS SOLIDE & ENERGIE SOLAIRE,F-06950 VALBONNE,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.62.563

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：563 / 566

页数：4

共 21 条

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