THE STRUCTURAL ENVIRONMENT OF Te DOPANTS IN GaAs USING EXAFS IN FLUORESCENCE MODE

被引：6

作者：

Greaves, G. N. ^{[1
]}

Halfpenny, P. J. ^{[2
]}

Lamble, G. M. ^{[3
]}

Roberts, K. J. ^{[3
]}

机构：

[1] SERC, Daresbury Lab, Gb Warrington WA4 4AD, Cheshire, England

[2] Univ Southampton, Dept Mat Engn, Gb Southampton S09 5NH, England

[3] Univ Strathclyde, Dept Pure & Appl Chem, Gb Glasgow G1 1XL, Lanark, Scotland

来源：

JOURNAL DE PHYSIQUE | 1986年 / 47卷 / C-8期

关键词：

D O I：

10.1051/jphyscol:19868175

中图分类号：

学科分类号：

摘要：

The local co-ordination of 'grown-in' Te in GaAs has been determined by FLEXAFS measurements. At carrier concentrations of 8 x 10(18) cm(-3) considerable dilation of the first coordination sphere around the dopant takes place, with appreciable contraction of the second co-ordination sphere. The first, second and third nearest neighbour distances were found to be 2.58 (+/- 0.02) angstrom, 3.52 (+/- 0.05) angstrom and 4.58 (+/- 0.1) angstrom, respectively. These are discussed in terms of various models Which have been proposed for group VI dopants in GaAs.

引用

页码：367 / 370

页数：4

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