LOCAL-STRUCTURE OF S-IMPURITIES IN GAAS

被引：59

作者：

SETTE, F ^{[1
]}

PEARTON, SJ ^{[1
]}

POATE, JM ^{[1
]}

ROWE, JE ^{[1
]}

机构：

[1] IBM CORP,ALMADEN RES CTR,SAN JOSE,CA 95120

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 56卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.56.2637

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2637 / 2640

页数：4

共 12 条

[1] Beleznay F., 1980, NEW DEV SEMICONDUCTO
[2] SPECIFIC SITE LOCATION OF S AND SI IN ION-IMPLANTED GAAS
BHATTACHARYA, RS
PRONKO, PP
LING, SC
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 880 - 882
[3] SULFUR IMPLANTATION IN GAAS
BHATTACHARYA, RS
RAI, AK
YEO, YK
PRONKO, PP
PARK, YS
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 637 - 643
[4] DIRECT STRUCTURAL STUDY OF CL ON SI[111] AND GE[111] SURFACES - NEW CONCLUSIONS
CITRIN, PH
ROWE, JE
EISENBERGER, P
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 2299 - 2301
[5] LANG DV, 1985, DEEP LEVELS SEMICOND
[6] EXTENDED X-RAY ABSORPTION FINE-STRUCTURE - ITS STRENGTHS AND LIMITATIONS AS A STRUCTURAL TOOL
LEE, PA
CITRIN, PH
EISENBERGER, P
KINCAID, BM
[J]. REVIEWS OF MODERN PHYSICS, 1981, 53 (04) : 769 - 806
[7] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GA1-XINXAS RANDOM SOLID-SOLUTIONS
MIKKELSEN, JC
BOYCE, JB
[J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7130 - 7140
[8] MANY-BODY EFFECTS ON EXTENDED X-RAY ABSORPTION FINE-STRUCTURE AMPLITUDES
STERN, EA
BUNKER, BA
HEALD, SM
[J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5521 - 5539
[9] SURFACE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF LOW-Z ADSORBATES STUDIED WITH FLUORESCENCE DETECTION
STOHR, J
KOLLIN, EB
FISCHER, DA
HASTINGS, JB
ZAERA, F
SETTE, F
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (14) : 1468 - 1471
[10] ABINITIO CALCULATIONS OF AMPLITUDE AND PHASE FUNCTIONS FOR EXTENDED X-RAY ABSORPTION FINE-STRUCTURE SPECTROSCOPY
TEO, BK
LEE, PA
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1979, 101 (11) : 2815 - 2832

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