SULFUR IMPLANTATION IN GAAS

被引：8

作者：

BHATTACHARYA, RS ^{[1
]}

RAI, AK ^{[1
]}

YEO, YK ^{[1
]}

PRONKO, PP ^{[1
]}

PARK, YS ^{[1
]}

机构：

[1] USAF,AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90860-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：637 / 643

页数：7

共 10 条

[1] DAMAGE AND LATTICE LOCATION STUDIES OF SI-IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

PRONKO, PP .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :890-892

[2]

BHATTACHARYA RS, UNPUB

[3]

CHEMIN JF, 1974, J APPL PHYS, V45, P537, DOI 10.1063/1.1663279

[4]

DAVIES JA, 1973, CHANNELING THEORY OB, P391

[5]

DONNELLY JP, 1977, I PHYS C SER B, V33, P166

[6]

DONNELLY JP, 1976, GALLIUM ARSENIDE REL

[7]

EISEN FH, 1975, ION IMPLANTATION SEM, P3

[8] ELECTRICAL-PROPERTIES AND DISTRIBUTION OF SULFUR IMPLANTS IN GAAS [J].

KWOR, R ;

YEO, YK ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4786-4792

[9] LATTICE INCORPORATION OF N-TYPE DOPANTS IN GAAS [J].

RAI, AK ;

BHATTACHARYA, RS ;

PRONKO, PP .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1086-1088

[10]

Wilkens M., 1978, Diffraction and imaging techniques in material science, vol.1. Electron microscopy, 2nd revised edition, P185

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