DAMAGE AND LATTICE LOCATION STUDIES OF SI-IMPLANTED GAAS

被引：22

作者：

BHATTACHARYA, RS

PRONKO, PP

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 10期

关键词：

D O I：

10.1063/1.92937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：890 / 892

页数：3

共 8 条

[1] DOSE DEPENDENCE OF EPITAXIAL REGROWTH OF SE-IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

PRONKO, PP ;

LING, SC ;

WILSON, SR .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :502-504

[2]

BHATTACHARYA RS, UNPUB

[3]

BHATTACHARYA RS, 1982, J APPL PHYS, V53, P1803

[4]

CHEMIN JF, 1974, J APPL PHYS, V45, P537, DOI 10.1063/1.1663279

[5]

LIU SG, 1980, RCA REV, V41, P227

[6] STEADY-STATE THERMALLY ANNEALED GAAS WITH ROOM-TEMPERATURE-IMPLANTED SI [J].

MASUYAMA, A ;

NICOLET, MA ;

GOLECKI, I ;

TANDON, JL ;

SADANA, DK ;

WASHBURN, J .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :749-751

[7] LOCALIZED VIBRATIONAL MODE ABSORPTION OF ION-IMPLANTED SILICON IN GAAS [J].

SKOLNIK, LH ;

SPITZER, WG ;

EULER, F ;

HUNSPERG.RG ;

KAHAN, A .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2146-&

[8] SILICON IMPLANTATION IN GAAS [J].

TANDON, JL ;

NICOLET, MA ;

EISEN, FH .

APPLIED PHYSICS LETTERS, 1979, 34 (02) :165-167

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