LATTICE INCORPORATION OF N-TYPE DOPANTS IN GAAS

[1] DOSE DEPENDENCE OF EPITAXIAL REGROWTH OF SE-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 502 - 504

[2] DAMAGE AND LATTICE LOCATION STUDIES OF SI-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 890 - 892

[3] LOW-TEMPERATURE ANNEALING BEHAVIOR OF SE-IMPLANTED GAAS STUDIED BY HIGH-RESOLUTION RUTHERFORD BACKSCATTERING CHANNELING [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1804 - 1806

[4] FLUENCE DEPENDENCE OF DISPLACEMENT DAMAGE, RESIDUAL DEFECTS, AND ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE-ANNEALED SE-+-IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4821 - 4825

[5] ELECTRICAL-PROPERTIES AND DISTRIBUTION OF SULFUR IMPLANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4786 - 4792

[6] Rai Abhishek, UNPUB

[7] Wilkens M., 1978, Diffraction and imaging techniques in material science, vol.1. Electron microscopy, 2nd revised edition, P185

[1] DOSE DEPENDENCE OF EPITAXIAL REGROWTH OF SE-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 502 - 504

[2] DAMAGE AND LATTICE LOCATION STUDIES OF SI-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 890 - 892

[3] LOW-TEMPERATURE ANNEALING BEHAVIOR OF SE-IMPLANTED GAAS STUDIED BY HIGH-RESOLUTION RUTHERFORD BACKSCATTERING CHANNELING [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1804 - 1806

[4] FLUENCE DEPENDENCE OF DISPLACEMENT DAMAGE, RESIDUAL DEFECTS, AND ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE-ANNEALED SE-+-IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4821 - 4825

[5] ELECTRICAL-PROPERTIES AND DISTRIBUTION OF SULFUR IMPLANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4786 - 4792

[6] Rai Abhishek, UNPUB

[7] Wilkens M., 1978, Diffraction and imaging techniques in material science, vol.1. Electron microscopy, 2nd revised edition, P185