MODIFIED CVD GROWTH AND CHARACTERIZATION OF ZNO THIN-FILMS

被引：27

作者：

DUTTA, A

BASU, S

机构：

[1] Semiconductor Preparation and Processing Laboratory, Materials Science Centre, Indian Institute of Technology, Kharagpur

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1993年 / 34卷 / 01期

关键词：

10;

D O I：

10.1016/0254-0584(93)90117-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Device-quality thin zinc oxide film (0.3-1 mum) was deposited on quartz and silicon substrates using a spray-CVD system developed in our laboratory. A boundary-layer model of the reproducible deposition mechanism of zinc oxide was formulated. Deposition parameters were optimized for composition and crystallinity. The surface morphology was examined using SEM. Optical absorption analysis revealed a band gap of 3.31 eV at room temperature. The electrical resistivity of the annealed film as measured by the four-point probe method using the van der Pauw configuration was found to be 122.9 ohm cm.

引用

页码：41 / 45

页数：5

共 10 条

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