PROPERTIES OF ALUMINUM-DOPED ZNO THIN-FILMS GROWN BY ELECTRON-BEAM EVAPORATION

被引：103

作者：

KUROYANAGI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 02期

关键词：

D O I：

10.1143/JJAP.28.219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：219 / 222

页数：4

共 9 条

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[5] GROUP-III IMPURITY DOPED ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING [J].

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[6] ELECTRICAL AND OPTICAL-PROPERTIES OF ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING FOR TRANSPARENT ELECTRODE APPLICATIONS [J].

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[8] RADIATION EFFECT DUE TO ENERGETIC OXYGEN-ATOMS ON CONDUCTIVE AL-DOPED ZNO FILMS [J].

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[9] TRANSPARENT AND HIGHLY CONDUCTIVE FILMS OF ZNO PREPARED BY RF REACTIVE MAGNETRON SPUTTERING [J].

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