OXYGEN DIFFUSION AND REACTION AT ANNEALED INSB MOS INTERFACES

被引：7

作者：

BREGMAN, J

SHAPIRA, Y

CALAHORRA, Z

BRILLSON, LJ

机构：

[1] ARMAMENT DEV AUTHOR,HAIFA 31021,ISRAEL

[2] XEROX CORP,RES CTR,WEBSTER,NY 14580

来源：

SURFACE SCIENCE | 1986年 / 178卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90295-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：188 / 200

页数：13

共 18 条

[1]

ANTONYUK RZ, 1982, FIZ TEKH POLUPROVODH, V16, P501

[2] QUANTITATIVE AUGER ANALYSIS BY DEPTH PROFILING OF LINE-SHAPES - APPLICATION TO NATIVE OXIDE-INSB INTERFACES [J].

BREGMAN, J ;

SHAPIRA, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :959-963

[3]

BREGMAN J, 1985, THIN SOLID FILMS, V125, P355

[4] SOME PROPERTIES OF PLASMA-GROWN GAAS OXIDES [J].

CHANG, RPH .

THIN SOLID FILMS, 1979, 56 (1-2) :89-106

[5]

FUJISADA H, 1984, JAPAN J APPL PHYS 2, V23, pL16

[6]

GOLUBEV VV, 1982, SOV MICROELECTRON+, V11, P100

[7]

ISHII T, 1977, J ELECTROCHEM SOC, V124, P471

[8]

KUHLMANN GJ, 1978, THIN SOLID FILMS, V56, P129

[9]

MEINERS LG, 1985, PHYSICS CHEM 3 5 COM

[10] METHOD OF SEPARATING HYSTERESIS EFFECTS FROM MIS CAPACITANCE MEASUREMENTS [J].

NAKAGAWA, T ;

FUJISADA, H .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :348-350

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