ELECTRON LOCALIZATION IN SILICON INVERSION LAYERS UNDER STRONG MAGNETIC-FIELDS

[11] CONDUCTANCE ANOMALIES AND ELECTRONIC STATES IN SILICON INVERSION LAYERS NEAR THRESHOLD AT LOW-TEMPERATURES [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 42 (05) : 1632 - 1639

[12] KAWAJI S, 1977, SOLID STATE COMMUN, V22, P89

[13] KAWAJI S, 1976, SURF SCI, V58, P254

[14] LANDWEHR G, 1976, INT C APPLICATION HI, P15

[15] LOZOVIK YE, 1975, JETP LETT+, V22, P11

[16] ANDERSON TRANSITION [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1975, 345 (1641) : 169 - 205

[17] MOTT NF, 1974, METAL INSULATOR TRAN, P155

[18] SOMMERFORD DJ, 1971, J PHYS C SOLID STATE, V4, P1570

[19] 2-DIMENSIONAL CRYSTALLIZATION OF ELECTRONS IN MOS STRUCTURES INDUCED BY STRONG MAGNETIC-FIELD [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 42 (02) : 391 - 398

[20] UEMURA Y, 1974, JPN J APPL PHYS S2, V2, P17

[11] CONDUCTANCE ANOMALIES AND ELECTRONIC STATES IN SILICON INVERSION LAYERS NEAR THRESHOLD AT LOW-TEMPERATURES [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 42 (05) : 1632 - 1639

[12] KAWAJI S, 1977, SOLID STATE COMMUN, V22, P89

[13] KAWAJI S, 1976, SURF SCI, V58, P254

[14] LANDWEHR G, 1976, INT C APPLICATION HI, P15

[15] LOZOVIK YE, 1975, JETP LETT+, V22, P11

[16] ANDERSON TRANSITION [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1975, 345 (1641) : 169 - 205

[17] MOTT NF, 1974, METAL INSULATOR TRAN, P155

[18] SOMMERFORD DJ, 1971, J PHYS C SOLID STATE, V4, P1570

[19] 2-DIMENSIONAL CRYSTALLIZATION OF ELECTRONS IN MOS STRUCTURES INDUCED BY STRONG MAGNETIC-FIELD [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 42 (02) : 391 - 398

[20] UEMURA Y, 1974, JPN J APPL PHYS S2, V2, P17