PULSED-ELECTRON-BEAM ANNEALING OF POLYCRYSTALLINE-SILICON FILMS

被引：10

作者：

KAMINS, TI ^{[1
]}

GREENWALD, AC ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期

关键词：

D O I：

10.1063/1.91072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pulsed-electron-beam annealing of moderately-phosphorus-doped poly-silicon films reduces their resistance below that of thermally annealed films under optimum conditions. In heavily doped films, the electron pulse can cause the effective dopant concentration to exceed that corresponding to solid solubility, but the excess dopant does not stay in solution upon subsequent heat treatment.

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页码：282 / 285

页数：4

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