TEMPERATURE DEPENDENCE OF JUNCTION TRANSISTOR PARAMETERS

[1] CARRIER EXTRACTION IN GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01): : 43 - 50

[2] CARRIER INJECTION AND EXTRACTION IN LEAD SULPHIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (397): : 50 - 53

[3] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[4] LIFETIME OF ELECTRONS IN P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 100 (02): : 523 - 524

[5] MICROWAVE OBSERVATION OF THE COLLISION FREQUENCY OF ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 89 (05): : 1152 - 1153

[6] OPTICAL EFFECTS IN BULK SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1950, 77 (02): : 287 - 287

[7] BROOKS H, 1951, PHYS REV, V83, P879

[8] EFFECT OF NICKEL AND COPPER IMPURITIES ON THE RECOMBINATION OF HOLES AND ELECTRONS IN GERMANIUM [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 853 - 859

[9] VARIATION OF TRANSISTOR PARAMETERS WITH TEMPERATURE [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1472 - 1476

[10] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390

[1] CARRIER EXTRACTION IN GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01): : 43 - 50

[2] CARRIER INJECTION AND EXTRACTION IN LEAD SULPHIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (397): : 50 - 53

[3] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[4] LIFETIME OF ELECTRONS IN P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 100 (02): : 523 - 524

[5] MICROWAVE OBSERVATION OF THE COLLISION FREQUENCY OF ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 89 (05): : 1152 - 1153

[6] OPTICAL EFFECTS IN BULK SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1950, 77 (02): : 287 - 287

[7] BROOKS H, 1951, PHYS REV, V83, P879

[8] EFFECT OF NICKEL AND COPPER IMPURITIES ON THE RECOMBINATION OF HOLES AND ELECTRONS IN GERMANIUM [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 853 - 859

[9] VARIATION OF TRANSISTOR PARAMETERS WITH TEMPERATURE [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1472 - 1476

[10] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390