ELECTRON-MICROSCOPY STUDY OF ARSENIC SEGREGATION IN SILICON

被引：4

作者：

KOMEM, Y ^{[1
]}

机构：

[1] TECHNION,DEPT MAT ENGN,HAIFA 3200,ISRAEL

来源：

ACTA METALLURGICA | 1977年 / 25卷 / 07期

关键词：

D O I：

10.1016/0001-6160(77)90097-9

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：809 / 814

页数：6

共 9 条

[1]

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[3]

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[5] DIFFRACTION CONTRAST OF ELECTRON MICROSCOPE IMAGES OF CRYSTAL LATTICE DEFECTS .2. DEVELOPMENT OF A DYNAMICAL THEORY [J].

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[6] PRECIPITATION AT COHERENCY LOSS IN CU-0.35 WT PCT CR [J].

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REZEK, J .

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[7] NEUTRON IRRADIATION DAMAGE IN MOLYBDENUM .1. CHARACTERIZATION OF SMALL PERFECT DISLOCATION LOOPS BY TRANSMISSION ELECTRON MICROSCOPY [J].

MAHER, DM ;

EYRE, BL .

PHILOSOPHICAL MAGAZINE, 1971, 23 (182) :409-&

[8] ARSENIC CLUSTERING IN SILICON [J].

SCHWENKER, RO ;

PAN, ES ;

LEVER, RF .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) :3195-+

[9] PARTIAL DISLOCATIONS ASSOCIATED WITH NBC PRECIPITATION IN AUSTENITIC STAINLESS STEELS [J].

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PHILOSOPHICAL MAGAZINE, 1964, 10 (105) :361-&

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