INDIUM-INDUCED LOWERING OF THE SCHWOEBEL BARRIER IN THE HOMOEPITAXIAL GROWTH OF CU(100)

被引：56

作者：

VANDERVEGT, HA

BREEMAN, M

FERRER, S

ETGENS, VH

TORRELLES, X

FAJARDO, P

VLIEG, E

机构：

[1] UNIV GRONINGEN,DEPT PHYS,9747 AG GRONINGEN,NETHERLANDS

[2] EUROPEAN SYNCHROTRON RADIAT FACIL,F-38043 GRENOBLE,FRANCE

[3] CNRS,MINERAL CRISTALLOG LAB,F-75252 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.51.14806

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the effect of In on the homoepitaxial growth of Cu(100) by surface x-ray diffraction. We show that In enhances the interlayer transport by lowering the barrier for interlayer diffusion (Schwoebel barrier) at step edges. This effect is most pronounced for growth at low temperatures or when In is annealed on the surface before Cu deposition is started. Enhanced island nucleation cannot explain the smoother growth. The results are in agreement with recent calculations. We speculate that In also has a neutralizing effect on contaminants or defects. © 1995 The American Physical Society.

引用

页码：14806 / 14809

页数：4

共 21 条

[1] BREEMAN M, 1994, MATER RES SOC SYMP P, V317, P329
[2] BREEMAN M, 1993, THESIS U GRONINGEN
[3] SURFACTANTS IN EPITAXIAL-GROWTH
COPEL, M
REUTER, MC
KAXIRAS, E
TROMP, RM
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (06) : 632 - 635
[4] THE SURFACE-MORPHOLOGY OF A GROWING CRYSTAL STUDIED BY THERMAL-ENERGY ATOM SCATTERING (TEAS)
DEMIGUEL, JJ
SANCHEZ, A
CEBOLLADA, A
GALLEGO, JM
FERRON, J
FERRER, S
[J]. SURFACE SCIENCE, 1987, 189 : 1062 - 1068
[5] EHRLICH G, 1966, J CHEM PHYS, V44, P1030
[6] KINETICS OF GROWTH OF CU ON CU(001)
ERNST, HJ
FABRE, F
FOLKERTS, R
LAPUJOULADE, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1809 - 1817
[7] ORIGIN OF OXYGEN-INDUCED LAYER-BY-LAYER GROWTH IN HOMOEPITAXY ON PT(111)
ESCH, S
HOHAGE, M
MICHELY, T
COMSA, G
[J]. PHYSICAL REVIEW LETTERS, 1994, 72 (04) : 518 - 521
[8] FERRER S, 1995, REV SCI INSTRUM, V68, P1674
[9] REENTRANT LAYER-BY-LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF METAL-ON-METAL SUBSTRATES
KUNKEL, R
POELSEMA, B
VERHEIJ, LK
COMSA, G
[J]. PHYSICAL REVIEW LETTERS, 1990, 65 (06) : 733 - 736
[10] ANGLE CALCULATIONS FOR A 6-CIRCLE SURFACE X-RAY DIFFRACTOMETER
LOHMEIER, M
VLIEG, E
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1993, 26 : 706 - 716

← 1 2 3 →