LONG WAVELENGTH INFRARED PHOTOCONDUCTIVE INASSB DETECTORS GROWN IN SI WELLS BY MOLECULAR-BEAM EPITAXY

被引：6

作者：

DOBBELAERE, W

DEBOECK, J

VANHOVE, M

DENEFFE, K

DERAEDT, W

MERTENS, R

BORGHS, G

机构：

[1] Interuniversity Micro-Electronics Center (IMEC) vzw, B-3030 Leuven, Belgium

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 04期

关键词：

Infra-red detectors; Photoconductive devices; Photoelectric devices;

D O I：

10.1049/el:19900173

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs0.05Sb0.95 photoconductive infra-red detectors have been grown by molecular beam epitaxy in recessed Si wells. The embedded devices exhibited a voltage responsivity of 420 V/W at 77 K and 300 meV photon energy with a load resistor of 100 Ω and a bias voltage of 1.5 V. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：259 / 261

页数：3

共 4 条

[1] STRUCTURAL CHARACTERIZATION OF EMBEDDED GALLIUM-ARSENIDE ON SILICON BY MOLECULAR-BEAM EPITAXY
DEBOECK, J
LIANG, JB
DENEFFE, K
VANHELLEMONT, J
ARENT, DJ
VANHOOF, C
MERTENS, R
BORGHS, G
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (12) : 1071 - 1073
[2] Dobbelaere W., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P717, DOI 10.1109/IEDM.1989.74155
[3] GROWTH AND OPTICAL CHARACTERIZATION OF INAS1-XSBX(0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) ON GAAS AND ON GAAS-COATED SI BY MOLECULAR-BEAM EPITAXY
DOBBELAERE, W
DEBOECK, J
BORGHS, G
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (18) : 1856 - 1858
[4] LONG-WAVELENGTH INASSB STRAINED-LAYER SUPERLATTICE PHOTOVOLTAIC INFRARED DETECTORS
KURTZ, SR
DAWSON, LR
BIEFELD, RM
FRITZ, IJ
ZIPPERIAN, TE
[J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (04) : 150 - 152

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