LONG-WAVELENGTH INASSB STRAINED-LAYER SUPERLATTICE PHOTOVOLTAIC INFRARED DETECTORS

被引：32

作者：

KURTZ, SR

DAWSON, LR

BIEFELD, RM

FRITZ, IJ

ZIPPERIAN, TE

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 04期

关键词：

D O I：

10.1109/55.31700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：150 / 152

页数：3

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[7] HIGH PHOTOCONDUCTIVE GAIN IN LATERAL INASSB STRAINED-LAYER SUPERLATTICE INFRARED DETECTORS
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[J]. APPLIED PHYSICS LETTERS, 1988, 53 (20) : 1961 - 1963
[8] DEMONSTRATION OF AN INASSB STRAINED-LAYER SUPERLATTICE PHOTODIODE
KURTZ, SR
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ZIPPERIAN, TE
LEE, SR
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1581 - 1583
[9] EXTENDED INFRARED RESPONSE OF INASSB STRAINED-LAYER SUPERLATTICES
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 831 - 833
[10] PHOTOLUMINESCENCE AND THE BAND-STRUCTURE OF INASSB STRAINED-LAYER SUPERLATTICES
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[J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 216 - 218