ELECTROABSORPTION MODULATOR BASED ON WANNIER-STARK LOCALIZATION WITH 20 GHZ/V EFFICIENCY

被引:13
作者
DEVAUX, F
BIGAN, E
ALLOVON, M
HARMAND, JC
HUET, F
CARRE, M
LANDREAU, J
机构
[1] CNET, 92220 Bagneux
关键词
D O I
10.1063/1.108086
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on a ridge-waveguide modulator based on Wannier-Stark localization in an InGaAs/InAlAs superlattice. Anisotropic absorption is measured and efficient modulation is obtained in the low-field domain and in the high-field domain with TE-polarized light. The device exhibits outstanding HF characteristics: in terms of bandwidth-to-drive-voltage ratio, we find that the Wannier-Stark localization is far more efficient than the quantum Stark effect.
引用
收藏
页码:2773 / 2775
页数:3
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