ELECTRONIC-STRUCTURE OF THE UNRECONSTRUCTED 30-DEGREES PARTIAL DISLOCATION IN SILICON

被引：42

作者：

NORTHRUP, JE

COHEN, ML

CHELIKOWSKY, JR

SPENCE, J

OLSEN, A

机构：

[1] EXXON RES & ENGN CO,CORP RES LABS,LINDEN,NJ 07036

[2] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85281

[3] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.24.4623

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4623 / 4628

页数：6

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