CAPACITANCE AND CONDUCTION PROPERTIES OF SEMI-INSULATING POLYCRYSTALLINE SILICON FILMS

被引:4
作者
BLACK, RD
机构
关键词
D O I
10.1063/1.341021
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2458 / 2460
页数:3
相关论文
共 11 条
[1]   HIGH-RESOLUTION ELECTRON-MICROSCOPY AND SCANNING TUNNELING MICROSCOPY OF NATIVE OXIDES ON SILICON [J].
CARIM, AH ;
DOVEK, MM ;
QUATE, CF ;
SINCLAIR, R ;
VORST, C .
SCIENCE, 1987, 237 (4815) :630-633
[2]   ENHANCED INJECTION AT SILICON-RICH OXIDE INTERFACES [J].
CHANG, KT ;
ROSE, K .
APPLIED PHYSICS LETTERS, 1986, 49 (14) :868-870
[3]   TRANSVERSE ELECTRIC-FIELD DEPENDENCE OF CONDUCTIVITY IN SEMIINSULATING POLYCRYSTALLINE SILICON [J].
COMIZZOLI, RB ;
WESTON, HT ;
WONG, YH ;
KOHL, JE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) :1746-1749
[4]   NON-EQUILIBRIUM C-V AND I-V CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J].
HIELSCHER, FH ;
PREIER, HM .
SOLID-STATE ELECTRONICS, 1969, 12 (07) :527-+
[5]  
Hill RM., 1967, THIN SOLID FILMS, V1, P39, DOI [10.1016/0040-6090(67)90019-3, DOI 10.1016/0040-6090(67)90019-3]
[6]   THERMIONIC EMISSION, FIELD EMISSION, AND THE TRANSITION REGION [J].
MURPHY, EL ;
GOOD, RH .
PHYSICAL REVIEW, 1956, 102 (06) :1464-1473
[7]   CHARACTERIZATION AND MODELING OF SIPOS ON SILICON PLANAR DEVICES [J].
SANDOE, JN ;
HUGHES, JR ;
SLATTER, JAG .
PHYSICA B & C, 1985, 129 (1-3) :234-239
[8]   THEORY OF FIELD EMISSION FROM SEMICONDUCTORS [J].
STRATTON, R .
PHYSICAL REVIEW, 1962, 125 (01) :67-&
[9]   CARRIER TRANSPORT IN OXYGEN-RICH POLYCRYSTALLINE-SILICON FILMS [J].
TARNG, ML .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4069-4076
[10]   INTERFACE EFFECTS OF SIPOS PASSIVATION [J].
TONG, DW ;
BENJAMIN, JL ;
VANDELL, WR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (06) :779-787