INTERFACE EFFECTS OF SIPOS PASSIVATION

被引：12

作者：

TONG, DW ^{[1
]}

BENJAMIN, JL ^{[1
]}

VANDELL, WR ^{[1
]}

机构：

[1] GE,CTR POWER SEMICOND TECHNOL,SYRACUSE,NY 13221

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/T-ED.1986.22568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：779 / 787

页数：9

共 15 条

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[9]

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