ENHANCED INJECTION AT SILICON-RICH OXIDE INTERFACES

被引：11

作者：

CHANG, KT

ROSE, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 14期

关键词：

D O I：

10.1063/1.97519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：868 / 870

页数：3

共 21 条

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DIMARIA, DJ ;

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SERRANO, CM ;

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[6] DUAL ELECTRON INJECTOR STRUCTURE [J].

DIMARIA, DJ ;

DONG, DW .

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[7] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].

DIMARIA, DJ ;

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JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2722-2735

[8] ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS [J].

DIMARIA, DJ ;

THEIS, TN ;

KIRTLEY, JR ;

PESAVENTO, FL ;

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BRORSON, SD .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1214-1238

[9] DUAL-ELECTRON-INJECTOR-STRUCTURE ELECTRICALLY ALTERABLE READ-ONLY-MEMORY MODELING STUDIES [J].

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[10]

DIMARIA DJ, 1980, PHYSICS MOS INSULATO, P1

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