1W CW, 672NM VISIBLE LASER-DIODES

被引：23

作者：

SERREZE, HB

HARDING, CM

WATERS, RG

机构：

[1] McDonnell Douglas Electronic Systems Co., Opto-Electronics Center, Elmsford, NY 10523

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 24期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19911389

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Visible laser diodes emitting at 672 nm and employing a GaInP strained-layer, single quantum well, graded-index separate confinement heterostructure (GRINSCH) design have been fabricated. CW output power in excess of 1 W and CW threshold current density as low as 305 A/cm2 were obtained from a coated, 60-mu-m wide oxide stripe diode operating at 10-degrees-C.

引用

页码：2245 / 2246

页数：2

共 5 条

[1] HIGH-POWER CW OPERATION OF BROAD AREA INGAAIP VISIBLE-LIGHT LASER-DIODES [J].