LOW-THRESHOLD, STRAINED-LAYER, GAINP ALGAINP GRINSCH VISIBLE DIODE-LASERS

被引：18

作者：

SERREZE, HB

CHEN, YC

机构：

[1] Oto-Electronics Center, McDonnell Douglas Electronic Systems Company, Elmsford

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 05期

关键词：

D O I：

10.1109/68.93857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graded-index, separate-confinement heterostructure (GRINSCH) semiconductor diode visible lasers employing a strained-layer GaInP single quantum well were fabricated from metalorganic chemical-vapor deposition (MOCVD)-grown epitaxial material. CW threshold current densities as low as 650 A/cm2 were measured for uncoated, 1200-mu-m-long, 15-mu-m-wide ridge structures operating at 30-degrees-C and emitting at 655-670 nm. A maximum output under quasi-CW conditions (100-mu-s pulse length, 1% duty factor) as high as 320 mW/facet was achieved before catastrophic failure. This CW threshold current density is believed to be the lowest reported to date for visible light diode lasers.

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页码：397 / 399

页数：3

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