HIGH-POWER ALGALNP 3-RIDGE TYPE LASER DIODE-ARRAY

被引：7

作者：

VALSTER, A ^{[1
]}

ANDRE, JP ^{[1
]}

DUPONTNIVET, E ^{[1
]}

MARTIN, GM ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 06期

关键词：

D O I：

10.1049/el:19880220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：326 / 327

页数：2

共 7 条

[1] GAINP-ALGAINP-GAAS HETEROSTRUCTURES GROWN BY MOVPE AT ATMOSPHERIC-PRESSURE [J].

ANDRE, JP ;

DUPONTNIVET, E ;

MORONI, D ;

PATILLON, JN ;

ERMAN, M ;

NGO, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :354-359

[2] HIGH-POWER (1.4W) ALGAINP GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE VISIBLE (LAMBDA-APPROXIMATELY-658-NM) LASER [J].

BOUR, DP ;

SHEALY, JR .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1658-1660

[3]

Casey H. C., 1978, HETEROSTRUCTURE LA A, P180

[4] HIGH-POWER OPERATION OF A TRANSVERSE-MODE STABILIZED ALGALNP VISIBLE-LIGHT (LAMBDA-L = 683NM) SEMICONDUCTOR-LASER [J].

FUJII, H ;

KOBAYASHI, K ;

KAWATA, S ;

GOMYO, A ;

HINO, I ;

HOTTA, H ;

SUZUKI, T .

ELECTRONICS LETTERS, 1987, 23 (18) :938-939

[5] VERY LOW THRESHOLD CURRENT-DENSITY OF A GAINP/ALGAINP DOUBLE-HETEROSTRUCTURE LASER GROWN BY MOCVD [J].

NAKANO, K ;

IKEDA, M ;

TODA, A ;

KOJIMA, C .

ELECTRONICS LETTERS, 1987, 23 (17) :894-895

[6]

SUZUKI T, 1986, 18TH INT C SOL STAT, P149

[7]

TIJBURG RP, I PHYS C SER, V79, P355

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