WETTING OF III-V-MELTS ON CRUCIBLE MATERIALS

被引：39

作者：

HARTER, I

DUSSERRE, P

DUFFAR, T

NABOT, JP

EUSTATHOPOULOS, N

机构：

[1] ENSEEG,LTPCM,F-38402 ST MARTIN DHERES,FRANCE

[2] UNIV J FOURIER,GRENOBLE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 131卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90409-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The measurement of the wetting angle of GaSb and InSb melts on C, BN, AlN, Al2O3 and SiO2 substrates by the sessile drop method under static vacuum is described and discussed. The surface tension and the work of adhesion are calculated. Finally, the results are compared with published data and with the predictions of theoretical models.

引用

页码：157 / 164

页数：8

共 24 条

[11] CONTACT ANGLES IN THE LIQUID-PHASE EPITAXY OF INP, GAINAS AND GAINASP [J].