PRACTICAL APPROACH TO DETERMINING CHARGE COLLECTED IN MULTIJUNCTION STRUCTURES DUE TO THE ION SHUNT EFFECT

被引：8

作者：

BROWN, AO ^{[1
]}

BHUVA, B ^{[1
]}

KERNS, SE ^{[1
]}

STAPOR, WJ ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper will present the algorithms and results of a computer program used to determine the charge collected on silicon semiconductor transistors due to the ion shunt effect. The program is unique because it is quick and simple to use and because it uses a general algorithm to determine an accurate initial electron-hole pair distribution in the ion track.

引用

收藏

页码：1918 / 1925

页数：8

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