THE DYNAMICS OF SHALLOW DONOR IONIZATION IN N-GAAS STUDIED WITH SUBNANOSECOND FIR-INDUCED PHOTOCONDUCTIVITY

被引：9

作者：

BURGHOORN, J

KLAASSEN, TO

WENCKEBACH, WT

机构：

[1] Fac. of Appl. Phys., Delft Univ. of Technol.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 01期

关键词：

D O I：

10.1088/0268-1242/9/1/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low-temperature dynamics of far-infrared (FIR) excited electrons bound to shallow donors has been studied in n-GaAs. In a magnetic field of 3.6 T the electrons are excited from the ground state to the 2p(+1) donor state with a short pulse of 118.8 mu m radiation and the photoconductive response is monitored with subnanosecond resolution. The observed response can be described with a simple three-level rate equation model, yielding a minimum value of 5 x 10(9) s(-1) for the ionization rate of a shallow donor in the 2p(+1) bound state.

引用

收藏

页码：30 / 34

页数：5

相关论文

共 15 条

[1] IMPURITY AND LANDAU-LEVEL ELECTRON LIFETIMES IN N-TYPE GAAS [J].

ALLAN, GR ;

BLACK, A ;

PIDGEON, CR ;

GORNIK, E ;

SEIDENBUSCH, W ;

COLTER, P .

PHYSICAL REVIEW B, 1985, 31 (06) :3560-3567

[2] RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM [J].

ASCARELLI, G ;

RODRIGUEZ, S .

PHYSICAL REVIEW, 1961, 124 (05) :1321-&

[3] LOW-TEMPERATURE RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM AND SILICON [J].

BROWN, RA ;

RODRIGUEZ, S .

PHYSICAL REVIEW, 1967, 153 (03) :890-+

[4]

Burghoorn J., 1990, Materials Science Forum, V65-66, P363

[5] SUBNANOSECOND FAR INFRARED PHOTOCONDUCTIVITY FROM A GAAS/ALGAAS MULTIQUANTUM WELL [J].

DEBEKKER, REM ;

CHAMBERLAIN, JM ;

CLAESSEN, LM ;

WYDER, P ;

STANAWAY, MB ;

GRIMES, RT ;

HENINI, M ;

HUGHES, OH ;

HILL, G .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) :1913-1915

[6] MICROWAVE SWITCHING BY PICOSECOND PHOTOCONDUCTIVITY [J].

JOHNSON, AM ;

AUSTON, DH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (06) :283-287

[7] FAR-INFRARED PHOTO-HALL EXPERIMENTS ON GAAS-SI [J].

KAMINSKI, J ;

SPECTOR, J ;

FOXON, CT ;

KLAASSEN, TO ;

WENCKEBACH, WT .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1989, 6 (05) :1030-1034

[8] FREE-ELECTRON LASER STUDY OF THE NONLINEAR MAGNETOPHOTOCONDUCTIVITY IN NORMAL-GAAS [J].

KAMINSKI, J ;

SPECTOR, J ;

PRETTL, W ;

WEISPFENNING, M .

APPLIED PHYSICS LETTERS, 1988, 52 (03) :233-235

[9]

Muro K., 1980, Journal of the Physical Society of Japan, V49, P593

[10] DYNAMICAL BEHAVIOR OF PHOTO-EXCITED ELECTRON-SYSTEM IN GALLIUM-ARSENIDE [J].

OHYAMA, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (05) :1431-1440