SUBNANOSECOND FAR INFRARED PHOTOCONDUCTIVITY FROM A GAAS/ALGAAS MULTIQUANTUM WELL

被引：6

作者：

DEBEKKER, REM

CHAMBERLAIN, JM

CLAESSEN, LM

WYDER, P

STANAWAY, MB

GRIMES, RT

HENINI, M

HUGHES, OH

HILL, G

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

[2] UNIV SHEFFIELD,DEPT ELECTR ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 04期

关键词：

D O I：

10.1063/1.346582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The far infrared (FIR) photoconductivity of GaAs/AlGaAs multiquantum wells (MQWs) doped with silicon has been investigated. The spectral response is consistent with extrinsic photoconductivity from shallow donors with an effective Rydberg of approximately 10.5 meV. The time-resolved photoconductivity due to stimulation with a cavity-dump FIR laser is measured. Subnanosecond rise and decay times are implied for the MQWs investigated; these times are shorter than for the corresponding bulk cases. Possible effects of geometric confinement on recombination rates are discussed. For a 150-period MQW, the responsivity at 118 μm is approximately 105 V W-1.

引用

页码：1913 / 1915

页数：3

共 14 条

[1]

DEBEKKER REM, UNPUB

[2] WIDEBAND HETERODYNE-DETECTION IN THE FAR INFRARED WITH EXTRINSIC GE PHOTOCONDUCTORS [J].