EVIDENCE OF HOT-ELECTRON TRANSFER INTO AN UPPER VALLEY IN GAAS

[11] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER - A HOT-ELECTRON GAAS DEVICE WITH CURRENT GAIN [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1105 - 1107

[12] NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2844 - 2853

[13] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (16) : 639 - +

[14] NON-LINEAR OPTICAL STUDIES OF PICOSECOND RELAXATION-TIMES OF ELECTRONS IN N-GAAS AND N-GASB [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 173 - 175

[15] THEORY OF GUNN EFFECT [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1736 - &

[16] ELECTRON-TRANSPORT AND BAND-STRUCTURE OF GA1-XALXAS ALLOYS [J]. PHYSICAL REVIEW B, 1980, 21 (02) : 659 - 669

[17] McLean T.P., 1960, PROGR SEMICONDUCTORS, V5, P55

[18] PHOTO-LUMINESCENCE IN HEAVILY DOPED GAAS .2. HYDROSTATIC-PRESSURE DEPENDENCE [J]. PHYSICAL REVIEW B, 1980, 22 (02): : 894 - 903

[19] PHOTOLUMINESCENCE STUDIES OF A GAAS-GA1-XALXAS SUPERLATTICE AT 8-300-K UNDER HYDROSTATIC-PRESSURE (O-70 KBAR) [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4106 - 4109

[20] YOKOYAMA N, 1984, UNPUB TECHNICAL DIGE, P532

[11] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER - A HOT-ELECTRON GAAS DEVICE WITH CURRENT GAIN [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1105 - 1107

[12] NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2844 - 2853

[13] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (16) : 639 - +

[14] NON-LINEAR OPTICAL STUDIES OF PICOSECOND RELAXATION-TIMES OF ELECTRONS IN N-GAAS AND N-GASB [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 173 - 175

[15] THEORY OF GUNN EFFECT [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1736 - &

[16] ELECTRON-TRANSPORT AND BAND-STRUCTURE OF GA1-XALXAS ALLOYS [J]. PHYSICAL REVIEW B, 1980, 21 (02) : 659 - 669

[17] McLean T.P., 1960, PROGR SEMICONDUCTORS, V5, P55

[18] PHOTO-LUMINESCENCE IN HEAVILY DOPED GAAS .2. HYDROSTATIC-PRESSURE DEPENDENCE [J]. PHYSICAL REVIEW B, 1980, 22 (02): : 894 - 903

[19] PHOTOLUMINESCENCE STUDIES OF A GAAS-GA1-XALXAS SUPERLATTICE AT 8-300-K UNDER HYDROSTATIC-PRESSURE (O-70 KBAR) [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4106 - 4109

[20] YOKOYAMA N, 1984, UNPUB TECHNICAL DIGE, P532