LONG-WAVELENGTH PHOTOEMISSION FROM INAS1-XPX

被引：16

作者：

SONNENBERG, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 10期

关键词：

D O I：

10.1063/1.1653759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：431 / +

页数：1

相关论文

共 10 条

[1] PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP [J].

FISCHER, TE .

PHYSICAL REVIEW, 1966, 142 (02) :519-&

[2] LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS [J].

FISHER, DG ;

ENSTROM, RE ;

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1971, 18 (09) :371-&

[3] FACTORS AFFECTING PHOTOEMISSION FROM CAESIUM OXIDE COVERED GAAS [J].

GARBE, S .

SOLID-STATE ELECTRONICS, 1969, 12 (11) :893-+

[4] OPTIMIZATION OF INASXP1-X-CS2O PHOTOCATHODE [J].

JAMES, LW ;

ANTYPAS, GA ;

UEBBING, JJ ;

YEP, TO ;

BELL, RL .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :580-+

[5] LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS [J].

JAMES, LW ;

UEBBING, JJ .

APPLIED PHYSICS LETTERS, 1970, 16 (09) :370-&

[6] THICKNESS OF CS AND CS-O FILMS ON GAAS(CS) AND GAAS(CS-O) PHOTOCATHODES [J].

SOMMER, AH ;

WHITAKER, HH ;

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1970, 17 (07) :273-&

[7] INASP-CS2O, A HIGH-EFFICIENCY INFRARED-PHOTOCATHODE [J].

SONNENBE.H .

APPLIED PHYSICS LETTERS, 1970, 16 (06) :245-&

[8] LOW-WORK-FUNCTION SURFACES FOR NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS [J].

SONNENBE.H .

APPLIED PHYSICS LETTERS, 1969, 14 (09) :289-&

[9]

TAYNAI JD, UNPUBLISHED

[10] BEHAVIOR OF CESIUM OXIDE AS A LOW WORK-FUNCTION COATING [J].

UEBBING, JJ ;

JAMES, LW .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) :4505-+