BEHAVIOR OF CESIUM OXIDE AS A LOW WORK-FUNCTION COATING

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2165 - &

[3] BAER AD, 1968, DA44009AMC1474 CONTR

[4] BELL RE, PRIVATE COMMUNICATIO

[5] PHOTOEMISSION FROM INP-CS-O [J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 76 - &

[6] BORZYAK PG, 1956, B ACAD SCI USSR PHYS, V20, P939

[7] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 65 - 74

[8] COHEN ML, 1965, PHYS REV, V139, P912

[9] CORE BV, 1967, J APPL PHYS, V38, P3353

[10] THERMIONIC AND SEMICONDUCTING PROPERTIES OF [AG]-CS2O, AG, CS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (09) : 1031 - 1034

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2165 - &

[3] BAER AD, 1968, DA44009AMC1474 CONTR

[4] BELL RE, PRIVATE COMMUNICATIO

[5] PHOTOEMISSION FROM INP-CS-O [J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 76 - &

[6] BORZYAK PG, 1956, B ACAD SCI USSR PHYS, V20, P939

[7] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 65 - 74

[8] COHEN ML, 1965, PHYS REV, V139, P912

[9] CORE BV, 1967, J APPL PHYS, V38, P3353

[10] THERMIONIC AND SEMICONDUCTING PROPERTIES OF [AG]-CS2O, AG, CS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (09) : 1031 - 1034